On the nature of cross-hatch patterns on compositionally graded Si1−xGex alloy layers
- 13 June 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (24), 3305-3307
- https://doi.org/10.1063/1.111287
Abstract
The effect of strain relaxation on the surface morphology of compositionally graded Si1−xGex layers grown at 550 °C has been investigated by a combination of transmission electron and atomic force microscopy. By annealing unrelaxed graded layers, we have found that shear displacements caused by dislocation glide roughen the surface dramatically. This effect is attributed to the formation of a network of dislocation clusters which give rise to the pronounced slip‐band pattern on the surface of the graded layers. It is shown that the surface plastic displacements produced by such a network during growth of the graded layer contribute significantly to the formation of the cross‐hatch patterns.Keywords
This publication has 6 references indexed in Scilit:
- Solid phase epitaxy of relaxed, implantation-amorphized Si1−xGex alloy layers grown on compositionally graded buffersApplied Physics Letters, 1993
- Self-adjustment of misfit dislocations in compositionally graded Si1−xGexlayersPhilosophical Magazine Letters, 1993
- z calibration of the atomic force microscope by means of a pyramidal tipReview of Scientific Instruments, 1993
- Surface morphology of related GexSi1−x filmsApplied Physics Letters, 1992
- Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in SiJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Mechanism and conditions for anomalous strain relaxation in graded thin films and superlatticesJournal of Applied Physics, 1992