Self-adjustment of misfit dislocations in compositionally graded Si1−xGexlayers
- 1 October 1993
- journal article
- research article
- Published by Taylor & Francis Ltd in Philosophical Magazine Letters
- Vol. 68 (4), 195-200
- https://doi.org/10.1080/09500839308242412
Abstract
A model is developed which predicts an ordering of the dislocation multiplication sources in Si1−xGex/Si heteroepitaxial systems. This ordering results in an increased probability for threading dislocations to annihilate. It is shown that, following certain selection rules for dislocation multiplication, an infinite three-dimensional network of misfit dislocations can develop throughout the compositionally graded Si1−xGex layer. The model is consistent with existing experimental data.Keywords
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