InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
- 1 February 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (5), 729-731
- https://doi.org/10.1063/1.123105
Abstract
The design, growth by metalorganic chemical vapor deposition, and processing of an In0.07Ga0.93As0.98N0.02 solar cell, with 1.0 eV band gap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6–0.8 μm, and solar cell internal quantum efficiencies >70% are obtained. Optical studies indicate that defects or impurities, from InGaAsN doping and nitrogen incorporation, limit solar cell performance.This publication has 4 references indexed in Scilit:
- Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatmentsApplied Physics Letters, 1998
- GaInNAs: a novel material for long-wavelength semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJapanese Journal of Applied Physics, 1992