Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
- 1 July 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (7A), L853
- https://doi.org/10.1143/jjap.31.l853
Abstract
We present the first report on the optical properties of dilute GaAS1-x N x alloys (0<x<0.015). The layers have been grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). The grown layers show a systematic red shift of the band-edge luminescence with increasing N content. The assignement of the photoluminescence to band-edge transitions and not to isolated N-N pair emission is verified by the characteristics of the optical absorption.Keywords
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