Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

Abstract

We have achieved the growth of a GaInNAs lattice matched to GaAs by metalorganic chemical vapor deposition using dimethylhydrazine (DMHy) as a nitrogen source for the first time. We demonstrate the room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes. Lasing operation can be achieved at a wavelength of 1.26 µ m under pulsed operation. The threshold current characteristic temperature of 1.17 µ m laser diodes is found to be 96 K (at ambient temperatures between 10 and 50° C) and 69 K (at ambient temperatures between 50 and 70° C). Light emission for light-emitting diodes (LEDs) grown on a GaAs substrate is also demonstrated at a wavelength range from 1.2 to 1.45 µ m. A wavelength of 1.45 µ m is the longest reported to date for a GaInNAs lattice matched to GaAs. These results indicate the potential of GaInNAs for application to laser diodes without thermal cooling because they are more stable at ambient temperatures than conventional GaInPAs laser diodes at wavelengths from 1.3 to 1.55 µ m.