Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
- 23 March 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (12), 1409-1411
- https://doi.org/10.1063/1.120579
Abstract
A detailed study on the optical quality of atmospheric pressure metalorganic vapor phase epitaxy grown GaAs(1−x)Nx epilayers (on GaAs substrates) in which the N incorporation is accomplished using dimethylhydrazine precursor is reported. We show here that the poor optical quality of these as-grown layers can be significantly improved by carefully planned post-growth heat treatments. Optical data are presented to demonstrate unambiguously that such treatments affect in no way the physical properties of these metastable layers (no phase separation) and that the improvement of their optical quality is closely connected to the incorporation behavior of N in this growth method.Keywords
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