Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor
- 1 June 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (11), 8070-8073
- https://doi.org/10.1063/1.373499
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistorsElectronics Letters, 1999
- Fabrication and characterisation of enhanced barrier AlGaN/GaN HFETElectronics Letters, 1999
- High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contactsApplied Physics Letters, 1998
- High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substratesElectronics Letters, 1998
- Single-level interface states in semiconductor structures investigated by admittance spectroscopyApplied Physics Letters, 1997
- AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)Electronics Letters, 1997
- Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopyApplied Physics Letters, 1996
- Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substratesApplied Physics Letters, 1996
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967