High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
- 1 April 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (4), 161-163
- https://doi.org/10.1109/55.753753
Abstract
Record performance of high-power GaN/Al/sub 0.14/-Ga/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported. Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added efficiency (PAE) of 35.4% and an associated gain of 9.2 dB at 10 GHz. High-electron mobility transistors with 1.5-mm gate widths (12/spl times/125 /spl mu/m), measured on-wafer, exhibit a total output power of 3.9 W CW (2.6 W/mm) at 10 GHz with a PAE of 29% and an associated gain of 10 dB at the -2 dB compression point. A 3-mm HEMT, packaged with a hybrid matching circuit, demonstrated 9.1 W CW at 7.4 GHz with a PAE of 29.6% and a gain of 7.1 dB. These data represent the highest power density, total power, and associated gain demonstrated for a III-nitride HEMT under RF drive.Keywords
This publication has 10 references indexed in Scilit:
- 3-watt AlGaN-GaN HEMTs on sapphire substrates with thermal management by flip-chip bondingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiC MESFET with output power of 50 watts CW at S-bandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- High-power 10-GHz operation of AlGaN HFET's on insulating SiCIEEE Electron Device Letters, 1998
- Self-heating in high-power AlGaN-GaN HFETsIEEE Electron Device Letters, 1998
- High Al-content AlGaN/GaN MODFETs for ultrahigh performanceIEEE Electron Device Letters, 1998
- GaN Materials for High Power Microwave AmplifiersMRS Proceedings, 1998
- Piezoelectric charge densities in AlGaN/GaN HFETsElectronics Letters, 1997
- Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHzElectronics Letters, 1997
- The dry etching of group III-nitride wide-bandgap semiconductorsJOM, 1996