High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

19 November 1998

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 73 (21), 3147-3149
https://doi.org/10.1063/1.122701

Abstract

Self-aligned AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with high transconductances have been demonstrated on a sapphire substrate. Source and drain were selectively regrown with ∼1700 Å of

n- GaN

adjacent to the gate electrode. Source resistance was reduced to 0.95 Ω mm from 1.4 to 1.8 Ω mm with conventional GaN-based MODFETs. These self-aligned devices show a record high value of extrinsic transconductance ∼400 mS/mm for AlGaN/GaN MODFETs with a gate length of 1.2 μm.

Keywords

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