AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)

Abstract

AlGaN/GaN double heterostructure channel modulation doped field effect-transistors (DHCMODFETs) with a 1.5–1.75 µm gate length and a 3 µm channel length exhibiting record transconductances and saturation current levels have been demonstrated. The maximum normalised drain current and transconductance are ~1100 mA/mm and 270 mS/mm, respectively, at room temperature. Near pinch-off, the drain breakdown voltage is ~80 V. At an elevated temperature of 300°C, the maximum drain source current and extrinsic transconductance of the device are ~500 mA/mm and 120 mS/mm, respectively.