InAlN - A new barrier material for GaN-based HEMTs
- 1 December 2007
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The InAlN/GaN heterojunction is a new alternative to the common AlGaN/GaN configuration with high sheet charge density and high thermal stability, promising very high power and temperature performance as well as robustness. The status, focussing on the lattice matched materials configuration is reviewed.Keywords
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