Gate‐lag and drain‐lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs
- 31 May 2007
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 204 (6), 2019-2022
- https://doi.org/10.1002/pssa.200674707
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructuresApplied Physics Letters, 2006
- Current conduction and saturation mechanism in AlGaN∕GaN ungated structuresJournal of Applied Physics, 2006
- Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructuresApplied Physics A, 2006
- InAlN/GaN HEMTs: a first insight into technological optimizationIEEE Transactions on Electron Devices, 2006
- Small-signal characteristics of AlInN/GaN HEMTsElectronics Letters, 2006
- Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on SiliconIEEE Transactions on Electron Devices, 2005
- Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTsIEEE Transactions on Electron Devices, 2004
- Power electronics on InAlN/(In)GaN: Prospect for a record performanceIEEE Electron Device Letters, 2001
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001
- Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistorsApplied Physics Letters, 2000