Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

Abstract

The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed. With 0.25 mum gate length the highest maximum output current density of more than 2 A/mm at room temperature and more than 3 A/mm at 77 K have been obtained even with sapphire substrates. Cut-off frequencies were f_T = 50 GHz and f_MAX = 60 GHz for 0.15 mum gate length without T-gate. Pulsed measurements reveal a less unstable surface than in the case of AlGaN/GaN structures. Although limited by buffer layer leakage, with field plates a maximum drain bias of 100 V has been reached with these devices. The high chemical stability of this unstrained heterostructure and its surface has been demonstrated with successful operation at 1000 degC in vacuum