Characteristics of Al2O3/AlInN/GaN MOSHEMT
- 1 January 2007
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 43 (12), 691-692
- https://doi.org/10.1049/el:20070425
Abstract
InAlN/GaN is a new heterostructure system for HEMTs with thin barrier layers and high channel current densities well above 1 A/mm. To improve the leakage characteristics of such thin-barrier devices, AlInN/GaN MOSHEMT devices with a 11 nm InAlN barrier and an additional 5 nm Al2O3 barrier (deposited by ALD) were fabricated and evaluated. Gate leakage in reverse direction could be reduced by one order of magnitude and the forward gate voltage swing increased to 4 V without gate breakdown. Compared to HEMT devices of similar geometry, no degradation of the current gain cutoff frequency was observed. The results showed that InAlN/GaN FETs with high channel current densities can be realised with low gate leakage characteristics and high structural aspect ratio by insertion of a thin Al2O3 gate dielectric layer.Keywords
This publication has 4 references indexed in Scilit:
- High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect TransistorsJapanese Journal of Applied Physics, 2006
- Small-signal characteristics of AlInN/GaN HEMTsElectronics Letters, 2006
- UNSTRAINED InAlN/GaN HEMT STRUCTUREInternational Journal of High Speed Electronics and Systems, 2004
- Power electronics on InAlN/(In)GaN: Prospect for a record performanceIEEE Electron Device Letters, 2001