3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells
- 23 October 2010
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 318 (1), 259-264
- https://doi.org/10.1016/j.jcrysgro.2010.10.067
Abstract
No abstract availableKeywords
Funding Information
- Program for New Century Excellent Talents in University (NCET-09-0634)
- Fundamental Research Funds for the Central Universities of China
This publication has 16 references indexed in Scilit:
- Numerical Investigation of the Influence of Material Property of a Crucible on Interface Shape in a Unidirectional Solidification ProcessCrystal Growth & Design, 2008
- Study on thermal stress in a silicon ingot during a unidirectional solidification processJournal of Crystal Growth, 2008
- Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cellsJournal of Crystal Growth, 2008
- Numerical analysis of the influence of tilt of crucibles on interface shape and fields of temperature and velocity in the unidirectional solidification processJournal of Crystal Growth, 2008
- Numerical analysis of influence of crucible shape on interface shape in a unidirectional solidification processJournal of Crystal Growth, 2008
- 3D time-dependent numerical study of the influence of the melt flow on the interface shape in a silicon ingot casting processJournal of Crystal Growth, 2007
- Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global modelJournal of Crystal Growth, 2006
- Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cellsPhysica B: Condensed Matter, 2006
- Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the modelInternational Journal of Heat and Mass Transfer, 2005
- Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of siliconModelling and Simulation in Materials Science and Engineering, 1997