Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model
- 31 October 2005
- journal article
- Published by Elsevier BV in International Journal of Heat and Mass Transfer
- Vol. 48 (21-22), 4481-4491
- https://doi.org/10.1016/j.ijheatmasstransfer.2005.04.031
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Numerical 3D modelling of turbulent melt flow in large CZ system with horizontal DC magnetic field—I: flow structure analysisJournal of Crystal Growth, 2004
- Numerical study of the effects of cusp‐shaped magnetic fields and thermal conductivity on the melt‐crystal interface in CZ crystal growthCrystal Research and Technology, 2003
- Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuationsJournal of Crystal Growth, 2003
- Gas flow effect on global heat transport and melt convection in Czochralski silicon growthJournal of Crystal Growth, 2003
- Global simulation of a silicon Czochralski furnaceJournal of Crystal Growth, 2002
- Modelling of thermal fluid flow in the liquid encapsulated Czochralski process and comparison with experimentsJournal of Crystal Growth, 1994
- Numerical simulation of molten silicon flow; comparison with experimentJournal of Crystal Growth, 1991
- Effect of the magnetic flux direction on LEC GaAs growth under magnetic fieldJournal of Crystal Growth, 1991
- Global modelling of heat transfer in crystal growth furnacesInternational Journal of Heat and Mass Transfer, 1990
- Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth: I. SimulationJournal of Crystal Growth, 1986