Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global model
- 1 July 2006
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 292 (2), 515-518
- https://doi.org/10.1016/j.jcrysgro.2006.04.060
Abstract
No abstract availableKeywords
Funding Information
- New Energy and Industrial Technology Development Organization (14350010)
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 12 references indexed in Scilit:
- Partly three-dimensional global modeling of a silicon Czochralski furnace. II. Model application: Analysis of a silicon Czochralski furnace in a transverse magnetic fieldInternational Journal of Heat and Mass Transfer, 2005
- Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the modelInternational Journal of Heat and Mass Transfer, 2005
- An analysis of temperature distribution near the melt–crystal interface in silicon Czochralski growth with a transverse magnetic fieldJournal of Crystal Growth, 2005
- 3D global analysis of CZ‐Si growth in a transverse magnetic field with rotating crucible and crystalCrystal Research and Technology, 2005
- Three-dimensional modeling of melt flow and interface shape in the industrial liquid-encapsulated Czochralski growth of GaAsJournal of Crystal Growth, 2004
- Numerical study of the effects of cusp‐shaped magnetic fields and thermal conductivity on the melt‐crystal interface in CZ crystal growthCrystal Research and Technology, 2003
- Gas flow effect on global heat transport and melt convection in Czochralski silicon growthJournal of Crystal Growth, 2003
- Silicon ingot casting: process development by numerical simulationsSolar Energy Materials and Solar Cells, 2002
- Global modelling of heat transfer in crystal growth furnacesInternational Journal of Heat and Mass Transfer, 1990
- Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth: I. SimulationJournal of Crystal Growth, 1986