Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells
- 1 April 2008
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 310 (7-9), 2192-2197
- https://doi.org/10.1016/j.jcrysgro.2007.11.165
Abstract
No abstract availableKeywords
Funding Information
- New Energy and Industrial Technology Development Organization (19360012)
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 12 references indexed in Scilit:
- Strategies for the coupling of global and local crystal growth modelsJournal of Crystal Growth, 2007
- 3D time-dependent numerical study of the influence of the melt flow on the interface shape in a silicon ingot casting processJournal of Crystal Growth, 2006
- Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global modelJournal of Crystal Growth, 2006
- Growth rate and impurity distribution in multicrystalline silicon for solar cellsMaterials Science and Engineering: A, 2005
- Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the modelInternational Journal of Heat and Mass Transfer, 2005
- Silicon feedstock for the multi-crystalline photovoltaic industrySolar Energy Materials and Solar Cells, 2002
- Removal of C/SiC from liquid silicon by directional solidificationJournal of Crystal Growth, 1991
- Global modelling of heat transfer in crystal growth furnacesInternational Journal of Heat and Mass Transfer, 1990
- Influence of Extended Defects and Native Impurities on the Electrical Properties of Directionally Solidified Polycrystalline SiliconJournal of the Electrochemical Society, 1988
- Influence of acrt on interface stability and particle trapping behavior in directional solidification of siliconJournal of Crystal Growth, 1985