Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
- 3 May 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (18), 3567-3569
- https://doi.org/10.1063/1.1737061
Abstract
Room-temperature deep-ultraviolet lasing of Al x Ga 1−x N multiple-quantum-well lasers with an Al composition x of 0.66 was achieved at 241.5 nm under pulsed optical pumping. The threshold pumping power was approximately 1200 kW/cm 2 at room temperature. The shortest lasing wavelength was 231.8 nm at 20 K. The laser structure was grown on a high-quality AlN layer, which was grown on a 4H-SiC substrate by inserting an AlN/GaN multibuffer-layer structure between the substrate and the AlN layer. Temperature dependence of lasing wavelength was also estimated to be 0.01 and 0.03 nm/K in the temperature region from 20 to 150 K and from 160 K to room temperature, respectively. The laser cavity was made of a cleaved facet of AlGaN epitaxial layers and a SiC substrate. For this purpose, it was necessary to polish the wafer to a thickness of less than 100 μm. The optimal wafer thickness for cleaving in our experiments was 60–70 μm.This publication has 14 references indexed in Scilit:
- 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodesApplied Physics Letters, 2003
- Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)NJapanese Journal of Applied Physics, 2003
- 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN AlloyJapanese Journal of Applied Physics, 2003
- Ultraviolet AlGaN multiple-quantum-well laser diodesApplied Physics Letters, 2003
- 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN BaseJapanese Journal of Applied Physics, 2003
- Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nmApplied Physics Letters, 2002
- Optical Characteristic of the Strain-Controlled GaN Epitaxial Layer Grown on 6H-SiC Substrate by an Adapting (GaN/AlN) Multibuffer Layerphysica status solidi (a), 2002
- Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wellsApplied Physics Letters, 2002
- Dependence of Crystal Quality on Residual Strain in Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1999
- Room-temperature deep-ultraviolet-stimulated emission from AlxGa1−xN thin films grown on sapphireApplied Physics Letters, 1999