Optical Characteristic of the Strain-Controlled GaN Epitaxial Layer Grown on 6H-SiC Substrate by an Adapting (GaN/AlN) Multibuffer Layer
- 12 July 2002
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 192 (1), 151-156
- https://doi.org/10.1002/1521-396x(200207)192:1<151::aid-pssa151>3.0.co;2-3
Abstract
No abstract availableKeywords
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