Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
- 23 December 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (26), 4910-4912
- https://doi.org/10.1063/1.1531835
Abstract
We report on AlGaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sapphire with peak emission at 278 nm. A new buffer layer growth process was used to reduce the number of defects and hence the nonradiative recombination. The improved material quality and carrier confinement resulted in pulsed powers as high as 3 mW at 278 nm and a significantly reduced deep-level-assisted long-wavelength emission.Keywords
This publication has 9 references indexed in Scilit:
- GaN/AlGaN p-channel inverted heterostructure JFETIEEE Electron Device Letters, 2002
- AlGaN single-quantum-well light-emitting diodes with emission at 285 nmApplied Physics Letters, 2002
- Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nmApplied Physics Letters, 2002
- Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire SubstratesJapanese Journal of Applied Physics, 2002
- AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphireApplied Physics Letters, 2002
- Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain managementApplied Physics Letters, 2002
- 324 nm Light Emitting Diodes with Milliwatt PowersJapanese Journal of Applied Physics, 2002
- Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nmJapanese Journal of Applied Physics, 2002
- Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaNApplied Physics Letters, 2001