Ultraviolet AlGaN multiple-quantum-well laser diodes
- 23 June 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (25), 4441-4443
- https://doi.org/10.1063/1.1585135
Abstract
We demonstrate ultraviolet emission from current-injection AlGaN multiple-quantum-well laser diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Lasing was obtained in gain-guided laser diode test structures with uncoated facets and cavity length ranging from 400 to 1500 μm. Under pulsed bias conditions, threshold current densities as low as 23 kA/cm 2 have been achieved for laser diodes with emission wavelengths between 359.7 and 361.6 nm. The maximum output power was 45 mW per facet with differential quantum efficiencies of 1.3%.Keywords
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