Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation
- 30 June 2005
- journal article
- Published by Elsevier BV in Materials Science in Semiconductor Processing
- Vol. 8 (1-3), 103-109
- https://doi.org/10.1016/j.mssp.2004.09.112
Abstract
No abstract availableKeywords
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