Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation
- 1 January 2000
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effect of fluorine on the diffusion of boron in ion implanted SiApplied Physics Letters, 1998
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Rapid annealing and the anomalous diffusion of ion implanted boron into siliconApplied Physics Letters, 1987
- Transient enhanced diffusion of dopants in silicon induced by implantation damageApplied Physics Letters, 1986
- Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self-interstitial phenomenaApplied Physics Letters, 1986
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983
- Electrical properties of Si heavily implanted with boron molecular ionsJournal of Applied Physics, 1982
- The behaviour of boron molecular ion implants into siliconSolid-State Electronics, 1978
- Annealing properties of ion-implanted p-n junctions in siliconJournal of Applied Physics, 1974
- Electrical Properties of Silicon Layers Implanted with BF2 MoleculesJournal of Applied Physics, 1972