Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes
- 29 October 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 19 (22), 1822-1824
- https://doi.org/10.1109/lpt.2007.906830
Abstract
We report 4H-SiC avalanche photodiodes operated in Geiger mode for single photon detection at 265 nm. At room temperature, the single photon detection efficiency is 14% with a dark count probability of 1.7 x 10-4. Since the external quantum efficiency is 21% at 265 nm, it follows that 65% of the absorbed photons are counted as avalanche events. The jitter of the photodiodes is also characterized.Keywords
This publication has 11 references indexed in Scilit:
- Low dark count rate 4H-SiC Geiger mode avalanche photodiodes operated under gated quenching at 325nmPublished by SPIE-Intl Soc Optical Eng ,2006
- Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication LayerIEEE Transactions on Electron Devices, 2006
- Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodesIEEE Photonics Technology Letters, 2005
- Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gainIEEE Journal of Quantum Electronics, 2005
- Study of reverse dark current in 4H-SiC avalanche photodiodesIEEE Journal of Quantum Electronics, 2005
- Low dark current 4H-SiC avalanche photodiodesElectronics Letters, 2003
- Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodesIEEE Photonics Technology Letters, 2002
- Demonstration of the first 4H-SiC avalanche photodiodesSolid-State Electronics, 2000
- Ionization rates and critical fields in 4H silicon carbideApplied Physics Letters, 1997
- Avalanche photodiodes and quenching circuits for single-photon detectionApplied Optics, 1996