Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication Layer
- 21 August 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (9), 2259-2265
- https://doi.org/10.1109/ted.2006.879677
Abstract
The authors report on the fabrication and performance of low-dark-current 4H-SiC avalanche photodiodes with a thin 180-nm-thick p - multiplication layer. At a photocurrent gain M of 1000, the dark current of a 100-mum-diameter device was 35 pA (0.44 muA/cm2). The peak unity-gain responsivity was 100 mA/W (external quantum efficiency=46%) at lambda=268 nm, and at high gain, a responsivity greater than 107 A/W was achieved. The excess noise factor corresponds to k=0.12. Time-domain pulse measurements indicate an RC-limited unity-gain bandwidth of 300 MHzKeywords
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