Low dark current 4H-SiC avalanche photodiodes
- 1 January 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (23), 1673-1674
- https://doi.org/10.1049/el:20031059
Abstract
The fabrication and characterisation of low dark current 4H-SiC avalanche photodiodes is reported. Current–voltage characteristics for a 100 µm-diameter device indicate that near breakdown, for a photocurrent gain greater than 103, the dark current is less than 2 nA. The dark current is dominated by surface leakage at the mesa sidewall. Significant reduction of the dark current has been achieved by improved sidewall passivation.Keywords
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