Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain
- 19 September 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 41 (10), 1213-1216
- https://doi.org/10.1109/jqe.2005.854132
Abstract
We report spatial nonuniformity of responsivity of 4H-SiC avalanche photodiodes at high gain (M > 1000) that results from variation in the doping density. Two-dimensional raster scans show a steady decline laterally across the device. The direction in which the spatial response decreases is the same as that of increasing breakdown voltage on the wafer.Keywords
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