Optimizing tunnel FET performance - Impact of device structure, transistor dimensions and choice of material
- 1 April 2009
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In recent years tunnel FETs (TFETs) have attracted a great deal of attention. The reason for this is that TFETs potentially allow beating the 60 mV/dec limit and thus eventually enable lowering the power consumption of ICs. However, TFETs usually exhibit an on-state performance inferior to a conventional MOSFET. Moreover, in order to obtain a superior off-state TFETs must exhibit subthreshold swings substantially smaller than 60 mV/dec over several orders of magnitude in current. In the present paper the impact of device structure, dimensions and the choice of material on the performance of TFETs will be discussed. In particular, the use of heterostructures and one-dimensional nanowires will be analyzed in detail.Keywords
This publication has 9 references indexed in Scilit:
- Toward Nanowire ElectronicsIEEE Transactions on Electron Devices, 2008
- Silicon nanowire tunneling field-effect transistorsApplied Physics Letters, 2008
- Tunneling phenomena in carbon nanotube field‐effect transistorsPhysica Status Solidi (a), 2008
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/decIEEE Electron Device Letters, 2007
- Double-Gate Tunnel FET With High-$\kappa$ Gate DielectricIEEE Transactions on Electron Devices, 2007
- Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devicesSolid-State Electronics, 2007
- P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel LengthsJapanese Journal of Applied Physics, 2006
- Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb∕GaSb and GaInAsSb∕InAs alloys as a function of compositionJournal of Applied Physics, 2005
- Band-to-Band Tunneling in Carbon Nanotube Field-Effect TransistorsPhysical Review Letters, 2004