High performance thin-film flip-chip InGaN–GaN light-emitting diodes
- 14 August 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (7)
- https://doi.org/10.1063/1.2337007
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- High efficiency GaN-based LEDs and lasers on SiCJournal of Crystal Growth, 2004
- Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting DiodesJapanese Journal of Applied Physics, 2004
- Increase in the extraction efficiency of GaN-based light-emitting diodes via surface rougheningApplied Physics Letters, 2004
- High-power AlGaInN flip-chip light-emitting diodesApplied Physics Letters, 2001
- Damage-free separation of GaN thin films from sapphire substratesApplied Physics Letters, 1998
- Optical patterning of GaN filmsApplied Physics Letters, 1996
- Room-temperature photoenhanced wet etching of GaNApplied Physics Letters, 1996
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Transmission of Isotropic Radiation Across an Interface Between Two DielectricsApplied Optics, 1964