High efficiency GaN-based LEDs and lasers on SiC
- 10 December 2004
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 272 (1-4), 242-250
- https://doi.org/10.1016/j.jcrysgro.2004.08.056
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Pendeoepitaxy of GaN and InGaN LEDs on SiCMaterials Science Forum, 2000
- Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical ConsequencesPhysica Status Solidi (b), 1999
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997