Laser‐enhanced, room‐temperature wet etching of GaN using either dilute HCl:H2O (1:10) or 45% KOH:H2O(1:3) is reported. Etch rates of a few hundred Å/min (HCl) and up to a few thousand Å/min (KOH) have been measured for unintentionally dopedn‐type films of thickness (1–2 μm) grown by MOCVD on a sapphire substrate. The etching is thought to take place photoelectrochemically with holes and electronsgenerated by incident illumination from 4.5 mW of HeCd laser power enhancing the oxidation and reduction reactions in an electrochemical cell.