Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes

Abstract

Ultraviolet (UV) light-emitting diode (LED) epilayers were grown on low dislocation density (1×10⁸/cm²) GaN templates with sapphire substrates. Then, the GaN templates and sapphire substrates were removed using laser-induced lift-off and polishing techniques. Additionally, to enhance the extraction efficiency, this LED chip used a higher reflectance Ag p-type electrode, patterned surface, and silicone resin molding package. When this UV LED was operated at a forward-bias pulsed current of 1 A at room temperature, the peak wavelength, output power, forward voltage, and external quantum efficiency were 365 nm, 1.5 W, 4.4 V, and 44%, respectively.