Two-color detection with charge sensitive infrared phototransistors
- 2 November 2015
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 107 (18), 182106
- https://doi.org/10.1063/1.4935256
Abstract
Highly sensitive two-color detection is demonstrated at wavelengths of 9 μm and 14.5 μm by using a charge sensitive infrared phototransistor fabricated in a triple GaAs/AlGaAs quantum well (QW) crystal. Two differently thick QWs (7 nm- and 9 nm-thicknesses) serve as photosensitive floating gates for the respective wavelengths via intersubband excitation: The excitation in the QWs is sensed by a third QW, which works as a conducting source-drain channel in the photosensitive transistor. The two spectral bands of detection are shown to be controlled by front-gate biasing, providing a hint for implementing voltage tunable ultra-highly sensitive detectors.Funding Information
- Japan Science and Technology Agency (JST-Sentan)
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