A sensitive double quantum well infrared phototransistor
- 15 August 2006
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 100 (4), 044509
- https://doi.org/10.1063/1.2335686
Abstract
An infrared phototransistor on a double quantum well (QW) heterostructure is studied. A confined upper QW behaves as a photoactive gate to a conducting channel formed by the lower QW. By properly biasing the narrow gates for isolating the upper QW island, the lateral tunneling rate of cold electrons on upper QW can be tuned and hence the lifetime of photocarriers on the QW island can be controlled. Associated with this controllable lifetime, photoresponse takes a sharp maximum, which reaches as high as . Analysis in terms of a simple model suggests that the peak response originates from the interplay∕trade-off between the lifetime of photocarriers and the efficiency of photodetection process. The photodetection efficiency substantially varies as a consequence of large band bending induced by the thermal background radiation. The long (approximately millisecond order) and controllable lifetime in our device paves the way for future development of photon counters in the long wavelength range. In addition, our device has a good compatibility with standard GaAs integrated circuit technology.
Keywords
This publication has 9 references indexed in Scilit:
- Infrared phototransistor using capacitively coupled two-dimensional electron gas layersApplied Physics Letters, 2005
- Quantum well photoconductors in infrared detector technologyJournal of Applied Physics, 2003
- Theory, fabrication and characterization of quantum well infrared photodetectorsMaterials Science and Engineering: R: Reports, 2000
- Detection of single photons using a field-effect transistor gated by a layer of quantum dotsApplied Physics Letters, 2000
- A single-photon detector in the far-infrared rangeNature, 2000
- Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructuresApplied Physics Letters, 1999
- Analysis of the transport mechanism in GaAs/AlGaAs quantum-well infrared photodetection structures using time resolved photocurrent measurementsApplied Physics Letters, 1996
- Electron capture time measurements in GaAs/AlGaAs quantum-well infrared photodetectors: Photoresponse saturation by a free-electron laserJournal of Applied Physics, 1995
- Electron relaxation time measurements in GaAs/AlGaAs quantum wells: Intersubband absorption saturation by a free-electron laserJournal of Applied Physics, 1995