Optimization of Lateral Superjunction Based on the Minimum Specific ON-Resistance
- 28 March 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 63 (5), 1984-1990
- https://doi.org/10.1109/ted.2016.2542263
Abstract
The optimization methodology of the minimum specific ON-resistance R ON,min for the lateral superjunction device is proposed based on the concepts of charge and potential electric fields in this paper. From the R ON,min method, a new relationship between R ON and breakdown voltage V B is developed, and the analytical formulas are obtained to directly give the doping concentration N and the drift length L d . The calculated results, including the 800 and 1600 V examples, are in good agreement with the simulations. The optimized designs are also compared with the existing experimental and simulated data. It is shown that R ON from the proposed optimization method is minimum, and the methodology of R ON,min is universal.Keywords
Funding Information
- Natural Science Foundation of Guangdong Province (2014A030313736)
- Fundamental Research Funds for the Central Universities (ZYGX2013J030)
- National Natural Science Foundation of China (61376080, 61474017)
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