Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model
- 1 September 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 48 (9), 2161-2167
- https://doi.org/10.1109/16.944211
Abstract
A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power super-junction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in the design of SJ structures. Design criteria to minimize ON-resistance for a given breakdown voltage are discussed. Numerical 2-D simulations validate the proposed model.Keywords
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