Theory of Superjunction With NFD and FD Modes Based on Normalized Breakdown Voltage
- 29 October 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 62 (12), 4114-4120
- https://doi.org/10.1109/ted.2015.2491360
Abstract
A new relationship between the specific ON-resistance R ON and breakdown voltage V B for the balanced symmetric superjunction (SJ) device is presented to produce the lowest R ON for a given V B . The design formulas, including the doping density NW and the drift length L d , are given for both the nonfull depletion (NFD) and the full depletion SJ devices with an introduction of the normalized V B factor η. For the NFD SJ MOSFET, an R ON ∝ V1.03 B relationship is obtained. The analytical results show good agreement with the numerical results.Keywords
Funding Information
- Natural Science Foundation of Guangdong Province (2014A030313736)
- Fundamental Research Funds for the Central Universities (ZYGX2013J030)
- National Natural Science Foundation of China (61376080, 61474017)
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