SJ/RESURF LDMOST
- 28 June 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 51 (7), 1185-1191
- https://doi.org/10.1109/ted.2004.829876
Abstract
A monolithic lateral double diffused MOSFET (LDMOST) based on the super junction (SJ) concept is proposed to significantly improve the device's on-state and off-state characteristics. The device structure features a split drift region made of two parts: 1) an SJ structure that extends over most of the drift region and 2) a terminating reduced surface field (RESURF) region occupying a portion of the drift region adjacent to the n/sup +/ drain. This structure suppresses substrate-assisted depletion effects and ensures complete depletion and near uniform electric field distribution over the entire drift region. In the on-state, the high conductivity of the SJ drift region results in a significant improvement in the specific on-resistance for a given breakdown voltage (BV) and, hence, a reduction in the on-state, switching, and gate-drive losses. In the off-state, the RESURF region, located near the n/sup +/ drain, effectively neutralizes the substrate-assisted depletion effects and results in high BV.Keywords
This publication has 11 references indexed in Scilit:
- Super junction LDMOST in silicon-on-sapphire technology (SJ-LDMOST)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- COOLMOS/sup TM/-a new milestone in high voltage power MOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A new class of lateral power devices for HVIC's based on the 3D RESURF conceptPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A review of RESURF technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical modelIEEE Transactions on Electron Devices, 2001
- An analytical model for the 3D-RESURF effectSolid-State Electronics, 2000
- Theory of a novel voltage-sustaining layer for power devicesMicroelectronics Journal, 1998
- 3D RESURF double-gate MOSFET: A revolutionary power device conceptElectronics Letters, 1998
- A versatile 700-1200-V IC process for analog and switching applicationsIEEE Transactions on Electron Devices, 1991