Tunneling cyclotron resonance and the renormalized effective mass in semiconductor barriers

Abstract

Tunneling cyclotron resonance is used to measure the tunneling rate deep in the band gap of a pure AlAs barrier in a thin barrier GaAs/AlAs superlattice. The experimental results are analyzed in terms of a four-band k⋅P model which leads to a renormalized effective mass in the barrier. Excellent agreement with experiment is achieved and we are able to conclude that the mass in the AlAs barrier is strongly renormalized down to 0.09$m_e$ from the bulk-conduction-band value of 0.15$m_e$. .AE