Electron Mass Tunneling along the Growth Direction of (Al,Ga) As/GaAs Semiconductor Superlattices
- 23 June 1986
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (25), 2724-2727
- https://doi.org/10.1103/physrevlett.56.2724
Abstract
We have measured the effective mass of electrons tunneling through thin barriers in (Al, Ga) As/GaAs superlattices by performing cyclotron-resonance experiments with the magnetic field oriented perpendicular to the growth direction. The effective mass is shown to increase with the barrier height at a rate that is in rough agreement with a model that includes the change in band mass in the barrier.Keywords
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