Electronic Properties of Flat-Band Semiconductor Heterostructures
- 21 September 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 47 (12), 879-882
- https://doi.org/10.1103/physrevlett.47.879
Abstract
A new theory of the electronic properties of heterostructures is proposed. Linear combinations of Bloch waves, both propagating and evanescent, are matched across the interface. This leads to simple continuity conditions on the envelope functions, which can be used to solve any heterostructure problem. Calculated optical transitions in GaAs-AlGaAs and InAs-GaSb heterostructures show good agreement with experiment.Keywords
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