Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography
- 14 June 2013
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 52 (7R)
- https://doi.org/10.7567/jjap.52.076502
Abstract
With the approach of the realization of extreme ultraviolet (EUV) lithography, practical issues such as the defects of resist patterns have attracted attention. In this study, the defects of line-and-space resist patterns were investigated from the viewpoint of the stochastic effects of chemical reactions. The stochastic effect was expressed using the standard deviation σ of the protected-unit concentration. To eliminate bridges within a 6.8 µm length in the line direction, a 1.5–2.0σ difference is required between the average protected-unit concentration and the dissolution point at the center of the space. To eliminate line breaks and severe pinching within a 6.1 µm length in the line direction, a 1.2–1.6σ difference is required between the average protected-unit concentration and the dissolution point at the center of the resist line pattern.Keywords
This publication has 37 references indexed in Scilit:
- Effect of Molecular Weight and Protection Ratio on Latent Image Fluctuation of Chemically Amplified Extreme Ultraviolet ResistsJapanese Journal of Applied Physics, 2012
- Stochastic Effect of Acid Catalytic Chain Reaction in Chemically Amplified Extreme Ultraviolet ResistsJapanese Journal of Applied Physics, 2012
- From performance validation to volume introduction of ASML's NXE platformPublished by SPIE-Intl Soc Optical Eng ,2012
- EUV resist materials for 20nm and below half-pitch applicationsPublished by SPIE-Intl Soc Optical Eng ,2012
- Advances in Low Diffusion EUV ResistsJournal of Photopolymer Science and Technology, 2012
- EUV Resist Materials for 16 nm And below Half Pitch ApplicationsJournal of Photopolymer Science and Technology, 2012
- EUV Resist Process Performance Investigations on the NXE3100 Full Field ScannerJournal of Photopolymer Science and Technology, 2012
- High-sensitivity EUV Resists based on Tetrafluoroethylene contained FluoropolymersJournal of Photopolymer Science and Technology, 2011
- Theoretical Study on Chemical Gradient Generated in Chemically Amplified Resists Based on Polymer Deprotection upon Exposure to Extreme Ultraviolet RadiationApplied Physics Express, 2009
- Extreme Ultraviolet Lithography Development in the United StatesJapanese Journal of Applied Physics, 2007