EUV Resist Process Performance Investigations on the NXE3100 Full Field Scanner
- 1 January 2012
- journal article
- Published by Technical Association of Photopolymers, Japan in Journal of Photopolymer Science and Technology
- Vol. 25 (5), 559-567
- https://doi.org/10.2494/photopolymer.25.559
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Latest cluster performance for EUV lithographyPublished by SPIE-Intl Soc Optical Eng ,2012
- Comparison study for 3x-nm contact hole CD uniformity between EUV lithography and ArF immersion double patterningPublished by SPIE-Intl Soc Optical Eng ,2012
- Quantification of shot noise contributions to contact hole local CD nonuniformityPublished by SPIE-Intl Soc Optical Eng ,2012
- EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300Published by SPIE-Intl Soc Optical Eng ,2012
- Progress in EUV lithography towards manufacturing from an exposure tool perspectivePublished by SPIE-Intl Soc Optical Eng ,2012