Effect of Molecular Weight and Protection Ratio on Latent Image Fluctuation of Chemically Amplified Extreme Ultraviolet Resists
- 21 November 2012
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 51 (12R)
- https://doi.org/10.1143/jjap.51.126501
Abstract
Line edge roughness (LER) has been the most serious problem in the development of high-resolution lithography for manufacturing semiconductor devices. LER is caused by the stochastic effects in resist pattern formation. In this study, the effects of the molecular weight and protection ratio of a resist backbone polymer on latent image fluctuation were investigated by a Monte Carlo method. From the viewpoint of latent image fluctuation, a high molecular weight and a high protection ratio were found to be favorable for the reduction in LER.Keywords
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