Extreme Ultraviolet Lithography Development in the United States
- 1 September 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (9S)
- https://doi.org/10.1143/jjap.46.6105
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- The EUV resist test center at SEMATECH-NorthPublished by SPIE-Intl Soc Optical Eng ,2006
- Progress towards the development of a commercial tool and process for EUVL mask blanksPublished by SPIE-Intl Soc Optical Eng ,2005
- System integration and performance of the EUV engineering test standPublished by SPIE-Intl Soc Optical Eng ,2001
- Reduction imaging at 14 nm using multilayer-coated optics: Printing of features smaller than 0.1 μmJournal of Vacuum Science & Technology B, 1990
- Soft x-ray reduction lithography using multilayer mirrorsJournal of Vacuum Science & Technology B, 1989
- Soft x-ray projection lithography using an x-ray reduction cameraJournal of Vacuum Science & Technology B, 1988
- Tenth micron lithography with a 10 Hz 37.2 nm sodium laserMicroelectronic Engineering, 1988
- Molybdenum-silicon multilayer mirrors for the extreme ultravioletApplied Optics, 1985
- Soft X-ray imaging with a normal incidence mirrorNature, 1981
- XXXI. Investigations in optics, with special reference to the spectroscopeThe London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 1879