InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates
Open Access
- 1 October 2020
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 30 (11), 1089-1092
- https://doi.org/10.1109/lmwc.2020.3025674
Abstract
This letter presents the design, performance, and analysis of four low-noise amplifier (LNA) monolithic microwave integrated circuits (MMICs) operating in W-band. Two LNA designs were fabricated in two variations of a 20-nm gate-length metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) technology each. While for the first technology version the heterostructure is directly grown on the final gallium arsenide (GaAs) wafer, the second version uses direct wafer bonding to transfer the III-V heterostructure after the epitaxial growth to a silicon (Si) substrate. Based on the measured noise figure (NF) of the four MMICs over a comprehensive set of bias conditions, the impact of short-channel effects on the RF performance and possible improvements are analyzed. The first LNA covers an octave bandwidth with more than 15 dB of gain and an average NF (75-105 GHz) of 3.5 dB on a Si substrate. At 80 GHz, the second amplifier exhibits minimal NFs of 2.3 and 2.5 dB on GaAs and Si substrates, respectively. Compared to previously reported MOS- or Si-based technologies, the presented LNAs demonstrate state-of-the-art noise performance emphasizing the importance of electron confinement for highly scaled transistor technologies.Keywords
Funding Information
- European Union’s Horizon 2020 Research and Innovation Programme (871764)
This publication has 11 references indexed in Scilit:
- Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOIIEEE Transactions on Microwave Theory and Techniques, 2019
- 20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on SiliconIEEE Journal of Solid-State Circuits, 2019
- W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2019
- A Compact 75 GHz LNA with 20 dB Gain and 4 dB Noise Figure in 22nm FinFET CMOS TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2018
- Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2017
- InP HEMT integrated circuits operating above 1,000 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- 35nm InP HEMT LNAs at E/W-Band FrequenciesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- Wideband W-Band GAN LNA MMIC with State-of-the-Art Noise FigurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- 20 nm Metamorphic HEMT technology for terahertz monolithic integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989