35nm InP HEMT LNAs at E/W-Band Frequencies
- 24 November 2016
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper presents the design and performance of two millimeter-wave LNAs using 35nm InP HEMT device technology. First, a single-ended 3-stage LNA, operating over the 81-86 GHz band, is reported with a noise figure (NF) of 1.6-1.9 dB and a gain of 28 ±1 dB. This is the lowest reported noise figure for LNAs at this frequency. Secondly, a balanced LNA, operating over the 56- 110 GHz band, is reported with a NF of typically 2.7 dB and a gain of greater than 20 dB. This amplifier represents an unprecedented combination of low noise, good input/output match, and broad bandwidth.Keywords
This publication has 7 references indexed in Scilit:
- A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHzIEEE Journal of Solid-State Circuits, 2011
- THz Monolithic Integrated Circuits Using InP High Electron Mobility TransistorsIEEE Transactions on Terahertz Science and Technology, 2011
- A W-band low-noise amplifier with 22K noise temperaturePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- Metamorphic HEMT technology for low-noise applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- A W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier MMIC with 2.5dB noise figure and 19.4 dB gain at 94GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Fabrication of InP HEMT devices with extremely high FmaxPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008