SOI TFETs: Suppression of ambipolar leakage and low-frequency noise behavior
- 1 September 2010
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We report on the thin-body tunneling field-effect transistors (TFETs) built on SOI substrates with both SiO2 and HfO2 gate dielectrics. The source-drain leakage current is suppressed by the introduction of intrinsic regions adjacent to the drain side, reducing the electric field at the tunnel junction. We also investigate the temperature dependence of the TFET characteristics, as well as the low frequency noise (LFN) behavior. Unlike conventional MOSFETs, the TFET LFN behaves as 1/f2 even for large gate areas, indicating less trapping due to its much smaller effective gate length.Keywords
This publication has 12 references indexed in Scilit:
- Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital CircuitsIEEE Transactions on Electron Devices, 2009
- Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulatorApplied Physics Letters, 2009
- Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slopePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Can the Interband Tunnel FET Outperform Si CMOS?Published by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance TransistorIEEE Transactions on Electron Devices, 2008
- Tunnel field-effect transistor without gate-drain overlapApplied Physics Letters, 2007
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/decIEEE Electron Device Letters, 2007
- A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FETIEEE Transactions on Electron Devices, 2005
- Lateral interband tunneling transistor in silicon-on-insulatorApplied Physics Letters, 2004
- Electrical noise and RTS fluctuations in advanced CMOS devicesMicroelectronics Reliability, 2002