Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope
Top Cited Papers
- 1 December 2008
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 1-3
- https://doi.org/10.1109/iedm.2008.4796839